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| AP6680AGM RoHS-compliant Product Advanced Power Electronics Corp. Low On-Resistance Simple Drive Requirement Fast Switching Characteristic G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 11m 12A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D D D D SO-8 S S S G Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 +20 12 9.8 60 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 50 Unit /W Data and specifications subject to change without notice 1 200810084 AP6680AGM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 0.8 - Typ. 0.02 12 17 2.7 9.9 9 6 29 8 220 175 1 Max. Units 11 16.5 2.5 1 25 +100 27 1.5 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance VGS=10V, ID=12A VGS=4.5V, ID=8A VDS=VGS, ID=250uA VDS=10V, ID=12A VDS=30V, VGS=0V Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V Gate-Source Leakage Total Gate Charge 2 VGS=+20V ID=12A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1000 1600 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=2.1A, VGS=0V IS=12A, VGS=0V, dI/dt=100A/s Min. - Typ. 26 20 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6680AGM 50 50 T A = 25 C 40 o ID , Drain Current (A) 10V 7.0 V 5.0 V 4.5 V V G = 3.0 V ID , Drain Current (A) T A = 150 C 40 o 10V 7.0 V 5.0 V 4.5 V V G = 3.0 V 30 30 20 20 10 10 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 7 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.6 ID=8A T A =25 Normalized RDS(ON) I D = 12 A V G =10V 40 1.3 RDS(ON) (m) 20 1.0 0 0.7 2 4 6 8 10 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20.0 10 8 T j =150 o C T j =25 o C V GS =4.5V 6 RDS(ON) (m) IS(A) 10.0 V GS =10V 4 2 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 0 10 20 30 40 V SD , Source-to-Drain Voltage (V) I D , Drain Current (A) Fig 5. Forward Characteristic of Reverse Diode Fig 6. On-Resistance vs. Drain Current 3 AP6680AGM f=1.0MHz 16 10000 VGS , Gate to Source Voltage (V) 12 I D = 12 A V DS =15V V DS =20V V DS = 25 V C (pF) 8 1000 C iss 4 C oss C rss 0 0 10 20 30 40 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 0.2 10 100us 1ms ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 PDM t T Single Pulse 0.01 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 135/W 0.1 1s T A =25 o C Single Pulse DC 0.01 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 50 V DS =5V 40 VG T j =25 C T j =150 C o o ID , Drain Current (A) QG 4.5V 30 QGS 20 QGD 10 Charge 0 Q 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters SYMBOLS MIN NOM MAX 8 7 6 5 E1 E A A1 B c D E E1 e 1.35 0.10 0.33 0.19 4.80 5.80 3.80 1.55 0.18 0.41 0.22 4.90 6.15 3.90 1.27 TYP 0.254 TYP 1.75 0.25 0.51 0.25 5.00 6.50 4.00 1 2 3 4 e B G L 0.38 0.00 4.00 0.90 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 6680AGM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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